Transport properties of Ce(NixPd1-x)(2) Si-2

Citation
D. Huo et al., Transport properties of Ce(NixPd1-x)(2) Si-2, J MAGN MAGN, 226, 2001, pp. 202-204
Citations number
8
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science
Journal title
JOURNAL OF MAGNETISM AND MAGNETIC MATERIALS
ISSN journal
03048853 → ACNP
Volume
226
Year of publication
2001
Part
1
Pages
202 - 204
Database
ISI
SICI code
0304-8853(200105)226:<202:TPOCS>2.0.ZU;2-P
Abstract
The electrical resistivity and the thermoelectric power of Ce(NixPd1-x)(2)S i-2 have been investigated. The chemical pressure effect caused by substitu tion of Pd with Ni on the electrical resistivity and the thermoelectric pow er was found to be very similar to the effect of hydrostatic pressure. The ground state of Ce(NixPd1-x)(2)Si-2 changes gradually from an antiferromagn etic Kondo state (x < 0.2) to an intermediate valence state (x > 0.3) with increasing x. The non-magnetic heavy fermion state seems to be realized at x approximate to 0.2-0.3. (C) 2001 Published by Elsevier Science B.V.