Pressure and doping dependence of Hall effect and effective mass in V2O3

Citation
S. Klimm et al., Pressure and doping dependence of Hall effect and effective mass in V2O3, J MAGN MAGN, 226, 2001, pp. 216-217
Citations number
8
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science
Journal title
JOURNAL OF MAGNETISM AND MAGNETIC MATERIALS
ISSN journal
03048853 → ACNP
Volume
226
Year of publication
2001
Part
1
Pages
216 - 217
Database
ISI
SICI code
0304-8853(200105)226:<216:PADDOH>2.0.ZU;2-C
Abstract
We present results of electrical resistivitity and Hall effect measurements on single crystalline V2-yO3 as a function of temperature, pressure and do ping y. The pressure dependence of the Hall effect suggests an interpretati on in terms of spin fluctuations, which is also consistent with the tempera ture dependence of the electrical resistivity rho, If a T-2 fit is applied to rho at low temperatures a saturation rather than a divergence of the cor responding effective mass results as the metal-insulator transition is appr oached. (C) 2001 Elsevier Science B.V. All rights reserved.