Low-temperature resistivity and susceptibility of the low-carrier density,one-dimensional S-1/2 antiferromagnet Yb4As3

We report on low-T (T greater than or equal to 0.02 K) measurements of the electrical resistivity, rho (T,B), and the magnetic AC-susceptibility, chi (ac)(T,B), on the low-carrier density, one-dimensional S = 1/2 antiferromag net Yb4As3 in magnetic fields B less than or equal to 19 T. For 2 K less th an or equal to T less than or equal to 20 K we find rho - rho (0) = AT(2) ( rho (0): residual resistivity), with a large coefficient A approximate to 0 .75 mu Omega cm/K-2 followed by a minimum around 1 K and a 0.1% increase fo r T --> 0. In finite fields and below about 5 K, rho (T, B) shows a history -dependent hysteretic behavior. The oscillatory behavior superimposed is at tributed to the Shubnikov-de Haas effect arising from a low density of mobi le As-p holes. For T greater than or equal to 0.4 chi (ac)(T) follows the p rediction of the quantum sine-Gordon model. A cusp-like anomaly is found at 0.15 K. (C) 2001 Elsevier Science B.V. All rights reserved.