Temperature dependence of magnetocurrent of hot electrons in a spin-valve transistor

Authors
Jansen, R Vlutters, R Kumar, PSA van't Erve, OMJ Kim, SD Lodder, JC
Citation
R. Jansen et al., Temperature dependence of magnetocurrent of hot electrons in a spin-valve transistor, J MAGN MAGN, 226, 2001, pp. 658-660
Citations number
10
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science
Journal title
JOURNAL OF MAGNETISM AND MAGNETIC MATERIALS
ISSN journal
03048853 → ACNP
Volume
226
Year of publication
2001
Part
1
Pages
658 - 660
Database
ISI
SICI code
0304-8853(200105)226:<658:TDOMOH>2.0.ZU;2-H
Abstract
Spin-dependent transport of hot electrons across a spin valve has been stud ied as function of temperature using a spin-valve transistor with a soft Ni 80Fe20/Au/Co spin-valve base. Spin-dependent scattering makes the collector current highly sensitive to small magnetic fields that change the magnetic state of the base. The magnetocurrent approaches 400% at 100 K but decays to about 240% at room temperature. The reduction is attributed to mixing of the two spin channels due to spin-flip scattering of hot electrons by ther mal spin waves. (C) 2001 Elsevier Science B.V. All rights reserved.