Effect of planar doping in CO/SiO2-Ni/Cu/Co structures

The effect of interfacial planar doping with insulating granular layer in a sandwiched structure was studied. By inserting a thin SiO2-Ni layer into t he sandwiched Co/Cu/Co structures, the magnetoresistance curve as a functio n of the magnetic field changed significantly because of reduction of inter layer coupling and the change of its switching mechanism of the magnetizati ons by the interface modification. The switching fields are 10 and 60 Oe fo r the magnetization reversals in two magnetic layers. The MR peaks are squa re-shaped with the width of about 30 Oe and the peak MR ratio of 3.3%. (C) 2001 Published by Elsevier Science B.V.