In this work MI studies in films of amorphous Fe73.5Cu1Nb3Si13.5B9 with thi
ckness between 50nm and 20 mum under frequencies up to 1.8 GHz are presente
d. The real and imaginary parts of the impedance were measured using a spec
ially developed sample holder which makes use of a strip line like configur
ation. The dependence of the impedance on film thickness and annealing cond
itions are investigated. Evidences of FMR features are observed in the as-d
eposited and annealed samples, (C) 2001 Elsevier Science B.V. All rights re
served.