Low-field tunnel-type magnetoresistance (MR) was enhanced through annealing
in the air, in contrast to the intrinsic CMR where the optimized MR is ass
ociated with the annealing in O-2, and 10 times larger MR was obtained. Imp
edance analysis showed that the grain boundary resistance was 2 times large
r in the film annealed in the air than that in the O-2, while the grain res
istance was invariant in the films. From these results, it can be concluded
that the characteristics of grain boundaries play a crucial role in low-fi
eld tunnel-type MR of manganite LSMO/SiO2/Si thin films. Therefore, we sugg
est that the complex impedance analysis can provide us with useful informat
ion about not only transport at grain boundaries, but also the separated co
ntribution of grains and grain boundaries to MR. (C) 2001 Elsevier Science
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