APPLICATION OF LIFT-OFF DRY LITHOGRAPHY I N REFRACTORY-METAL LAYERS FOR HTSC THIN-FILM MICROPATTERING

Citation
Sv. Zhdanovich et al., APPLICATION OF LIFT-OFF DRY LITHOGRAPHY I N REFRACTORY-METAL LAYERS FOR HTSC THIN-FILM MICROPATTERING, Doklady Akademii nauk BSSR, 38(5), 1994, pp. 118-121
Citations number
9
Categorie Soggetti
Multidisciplinary Sciences
Journal title
ISSN journal
0002354X
Volume
38
Issue
5
Year of publication
1994
Pages
118 - 121
Database
ISI
SICI code
0002-354X(1994)38:5<118:AOLDLI>2.0.ZU;2-X
Abstract
A new method of HTSC film micropattering universal both from the point of view of substrate material and film material has been proposed. Th e essence of the method consists in the destruction of refractory meta l layers during their oxidation at high temperatures. As a result of o xidation the volume of the refractory metal film increases and high in ternal mechanical stresses lead to its destruction. After oxidation it is easy to remove the destructed film with the film of another materi al on it just with a compressed air stream. This makes it possible to integrate the semiconducting and superconducting technologies.