Spin-polarized electron transport in a NiFe/GaAs Schottky diode

Authors
Hirohata, A Xu, YB Guertler, CM Bland, JAC Holmes, SN
Citation
A. Hirohata et al., Spin-polarized electron transport in a NiFe/GaAs Schottky diode, J MAGN MAGN, 226, 2001, pp. 914-916
Citations number
7
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science
Journal title
JOURNAL OF MAGNETISM AND MAGNETIC MATERIALS
ISSN journal
03048853 → ACNP
Volume
226
Year of publication
2001
Part
1
Pages
914 - 916
Database
ISI
SICI code
0304-8853(200105)226:<914:SETIAN>2.0.ZU;2-V
Abstract
Spin transmission across Ni80Fe20/GaAs Schottky barrier interfaces was inve stigated at room temperature. Circularly polarized light was used to excite electrons with a spin polarization perpendicular to the film plane. An alm ost constant difference in the helicity-dependent photocurrent was observed at negative bias, attributed to efficient spin filtering at the interface. The photon energy dependence indicates that the asymmetry in the photocurr ent vanishes at high energy. (C) 2001 Elsevier Science B.V. All rights rese rved.