Room temperature spin-dependent tunneling in Co/SiOx granular multilayers h
as been analysed by the frequency dependence of the impedance and tunnel ma
gneto impedance. In the samples. layers of Co grains are separated by SiOx
layers wich have different thickness for each sample. Mean relaxation times
were determined from the complex impedance versus frequency curves using C
ole-Cole fitting procedures. For a intermediary insulator thickness two spi
n-dependent modalities have been found. They are explained in terms of inte
r- and intra-plane tunnelling. (C) 2001 Elsevier Science B.V. All rights re
served.