Atomic force microscopy on bare and thiol monolayer covered gallium arsenide

Authors
Citation
A. Abdelghani, Atomic force microscopy on bare and thiol monolayer covered gallium arsenide, MATER LETT, 50(2-3), 2001, pp. 73-77
Citations number
7
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science","Material Science & Engineering
Journal title
MATERIALS LETTERS
ISSN journal
0167577X → ACNP
Volume
50
Issue
2-3
Year of publication
2001
Pages
73 - 77
Database
ISI
SICI code
0167-577X(200108)50:2-3<73:AFMOBA>2.0.ZU;2-R
Abstract
In this work, we study the functionalized gallium arsenide (GaAs) surface w ith self-assembled monolayer (SAM) by means of atomic force microscopy (AFM ). First, we study the flatness of the dummy GaAs surface through AFM in el ectrolyte. Second, with the same technique, we study the effect of SAMs of octadecanethiol (C18H37SH) and alcohol-thiol (HOCH2(CH2)(10)SH) on GaAs sur face. Finally, for GaAs treated with octadecanethiol monolayer, we observe a hysteresis-demonstrating that the surface is hydrophobic and that the Van der Waals interaction between the tip and the sample is very high. GaAs tr eated with alcohol-thiol shows hysteresis, which shows that the surface is hydrophilic and uncharged. (C) 2001 Elsevier Science B.V. All rights reserv ed.