CdS nanocrystals formed in SiO2 substrates by ion implantation

In this work, CdS nanocrystal were formed in SiO2 substrates by implantatio n of Cd and S atoms (up to 10(17)/cm(2)) and subsequent annealing (up to 90 0 degreesC). The implanted and annealed layer was studied by X-ray diffract ion (XRD), UV transmittance and reflectance measurements (energy range 1.4- 6.5 eV), and Raman spectroscopy. Upon annealing, all methods proved the syn thesis of CdS crystallites from the starting components, and the features c haracteristic of the CdS-phase were strongly and consistently dependent on ion dose and annealing temperature. The analysis of the results shows that by implantation and post-implantation treatment, the average size of CdS cr ystallites can be controlled, and that smaller CdS nanocrystals are obtaine d for lower doses and lower annealing temperatures. (C) 2001 Elsevier Scien ce BN. All rights reserved.