Electronic properties of AFM-defined semiconductor nanostructures

The quest for even smaller and better-controlled semiconductor nanostructur es calls for improved nanofabrication techniques. We succeeded in patternin g metallic and semiconducting nanostructures by using local oxidation-media ted via a voltage between a conducting surface and a close-by tip of an ato mic force microscope (AFM). In particular, we were able to control the elec tronic properties of quantum point contacts, long quantum wires as well as single electron transistors embedded in an AlGaAs two-dimensional electron gas (2DEG). This article focuses on the technological aspects of this novel nanofabrication method. (C) 2001 Elsevier Science B.V. All rights reserved .