Electron beam lithography and reactive ion etching of nanometer size features in niobium films

Authors
Piotrowski, TT Piotrowska, A Kaminska, E Szopniewski, Z Kolesnik, S Wrobel, J Gierlowski, P Lewandowski, S
Citation
Tt. Piotrowski et al., Electron beam lithography and reactive ion etching of nanometer size features in niobium films, MAT SCI E C, 15(1-2), 2001, pp. 171-173
Citations number
9
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science
Journal title
MATERIALS SCIENCE & ENGINEERING C-BIOMIMETIC AND SUPRAMOLECULAR SYSTEMS
ISSN journal
09284931 → ACNP
Volume
15
Issue
1-2
Year of publication
2001
Pages
171 - 173
Database
ISI
SICI code
0928-4931(20010820)15:1-2<171:EBLARI>2.0.ZU;2-#
Abstract
The fabrication of nanostructures in niobium. thin films has been developed . Optimisation of process technology concerned pattern generation in e-beam sensitive AZ PF514 resist and pattern transfer by reactive ion etching (RI E) in CCl2F2/H-2 plasma. By adjusting the process, parameters Nb bridge str uctures with dimensions down to 80 nm and anisotropic rectangular arrays of antidots of 125-nm average diameter have been fabricated. Magnetisation cu rves measured on the structured Nb films strongly suggest formation of anis otropic vortex lattices in the system of anisotropic array of antidots. (C) 2001 Elsevier Science B.V. All rights reserved.