The influence of excimer laser processing on the thermal stability, especia
lly on the surface roughness evolution of W1-xSix/Si multilayers (MLs), is
studied. MLs with the compositions x = 0 (W/Si) and x = 0.33, 0.5 and 0.66
were evaporated by e-beam evaporation and co-evaporation onto Si substrates
. The samples were irradiated by XeCl laser pulses at fluences F = 0.075-0.
6 J cm(-2) and N = I or 100 pulses. Then, they were studied by atomic force
microscopy, thus completing previous X-ray scattering analyses. It was fou
nd that for x greater than or equal to 0.5 the clusters are formed at the M
Ls surface even in the as-deposited state. Sources of surface roughness are
the laser melting itself, Si crystallization and shrinking of the volume c
onnected with the formation of tungsten silicides. (C) 2001 Elsevier Scienc
e B.V. All rights reserved.