WAVE-GUIDE PROPERTIES OF OPTICAL STRUCTURES FABRICATED BY OXIDATION OF POROUS SILICON

Citation
Av. Tomov et al., WAVE-GUIDE PROPERTIES OF OPTICAL STRUCTURES FABRICATED BY OXIDATION OF POROUS SILICON, Technical physics letters, 23(5), 1997, pp. 410-411
Citations number
7
Categorie Soggetti
Physics, Applied
Journal title
ISSN journal
10637850
Volume
23
Issue
5
Year of publication
1997
Pages
410 - 411
Database
ISI
SICI code
1063-7850(1997)23:5<410:WPOOSF>2.0.ZU;2-K
Abstract
Results of an investigation of the optical properties of channel waveg uides fabricated by oxidation of porous silicon are described. The wav eguide parameters are estimated and the existence of optical anisotrop y is established. The effective refractive index of the dominant quasi -TM waveguide mode is measured. The results suggest that a buffer laye r exists between the waveguide and the silicon substrate. It is hypoth esized that a second refractive index peak exists within this layer. ( C) 1997 American Institute of Physics.