Av. Tomov et al., WAVE-GUIDE PROPERTIES OF OPTICAL STRUCTURES FABRICATED BY OXIDATION OF POROUS SILICON, Technical physics letters, 23(5), 1997, pp. 410-411
Results of an investigation of the optical properties of channel waveg
uides fabricated by oxidation of porous silicon are described. The wav
eguide parameters are estimated and the existence of optical anisotrop
y is established. The effective refractive index of the dominant quasi
-TM waveguide mode is measured. The results suggest that a buffer laye
r exists between the waveguide and the silicon substrate. It is hypoth
esized that a second refractive index peak exists within this layer. (
C) 1997 American Institute of Physics.