Study on stress indeuced leakage current transient characteristics in thingate oxide

FN tunneling and hot hole (HH) stress induced leakage current (SILC) transi ent characteristics in thin gate oxide are investigated. Under both stress conditions, the stress induced leakage current obeys a power-law time depen dence with different power factor. For HH SIM, the power factor significant ly departs from -1. HH SILC is found to have a more pronounced transient ef fect. The results show that HH SILC can be attributed to positive oxide det rapping and annihilation of positive charge-assisted tunneling current. The latter can be diminished by substrate hot electron injection.