Citation
Dh. Zhang et al., The UV photoconductivity of n-type GaN films deposited by MOCVD, ACT PHY C E, 50(9), 2001, pp. 1800-1804
Citations number
15
Categorie Soggetti
Physics
Journal title
ACTA PHYSICA SINICA
ISSN journal
10003290
→ ACNP
Volume
50
Issue
9
Year of publication
2001
Pages
1800 - 1804
Database
ISI
SICI code
1000-3290(200109)50:9<1800:TUPONG>2.0.ZU;2-T
Abstract
This paper studies the UV photoconductivity for non-doped and weakly Mg dop
ed n-type GaN films deposited by MOM. It was observed that these n-type sam
ples have. notable UV photoresponse and the relaxation time of the photores
ponse is relatively short-In the weak intensity range, the photoresponse de
creases linearly with the light intensity and the relaxation time of the ph
otoresponse becomes larger.