Intermixing behavior in InGaAs/InGaAsP multiple quantum wells with dielectric and InGaAs capping layers

The influence of the InGaAs capping layer on the intermixing behavior of di electric-capped In0.53Ga0.47 As/In0.81Ga0.19As0.37P0.63 multiple quantum we lls (MQWs) was investigated by measuring the change in the photoluminescenc e spectra after rapid thermal annealing. The magnitude of the energy shift in the transition energy from the first electronic sub-band to the first he avy- and light-hole sub-bands of the MQWs is large when SiO2 and InGaAs hyb rid capping layers are employed, but it is rather small when Si3N4 and InGa As hybrid capping layers are employed. This result indicates that the InGaA s capping layer holds promise for applications involved in the fabrication of integrated photonic devices, but only when it is incorporated with the S iO2 capping layer. The reason why the InGaAs capping layer behaves differen tly under the SiO2 and Si3N4 capping layers is also discussed.