Self-assembled AlInGaN quaternary superlattice structures

When an AlInGaN quaternary alloy is grown by metalorganic chemical-vapor de position under certain growth conditions, a self-assembled superlattice str ucture is obtained. The superlattice structure is made of quaternary layers with different AIN and InN compositions. Transmission electron microscopy data show that the superlattice periodicity is regular with an individual l ayer thickness that depends on the growth conditions. Secondary ion mass sp ectrometry measurements show that the layers' composition alternate between high-AIN and InN content and low-AlN and-InN content, while the in-plane l attice constant remains constant for both layers. A model is presented as a preliminary effort to explain these results. (C) 2001 American Institute o f Physics.