Fabrication and characterization of a Pb5Ge3O11 one-transistor-memory device

Authors
Li, TK Hsu, ST Ulrich, B Ying, H Stecker, L Evans, D Ono, Y Maa, JS Lee, JJ
Citation
Tk. Li et al., Fabrication and characterization of a Pb5Ge3O11 one-transistor-memory device, APPL PHYS L, 79(11), 2001, pp. 1661-1663
Citations number
11
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science
Journal title
APPLIED PHYSICS LETTERS
ISSN journal
00036951 → ACNP
Volume
79
Issue
11
Year of publication
2001
Pages
1661 - 1663
Database
ISI
SICI code
0003-6951(20010910)79:11<1661:FACOAP>2.0.ZU;2-Z
Abstract
A Pb5Ge3O11 metal-ferroelectric-metal-oxide-silicon memory transistor has b een fabricated. The device showed a memory window of about 2 V. The memory window was almost saturated at the operation voltage of 2 V. The "off" stat e drain current (I-D) at V-D of 0.1 V and V-G of 0.5 V is about 1x10(-8) A. The "on" state drain current (I-D) at V-D of 0.1 V and V-G of 0.5 V is abo ut 1x10(-6) A, which is 100 times high than that of off state. (C) 2001 Ame rican Institute of Physics.