Approach to study the noise properties in nanoscale electronic devices

Citation
X. Oriols et al., Approach to study the noise properties in nanoscale electronic devices, APPL PHYS L, 79(11), 2001, pp. 1703-1705
Citations number
19
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science
Journal title
APPLIED PHYSICS LETTERS
ISSN journal
00036951 → ACNP
Volume
79
Issue
11
Year of publication
2001
Pages
1703 - 1705
Database
ISI
SICI code
0003-6951(20010910)79:11<1703:ATSTNP>2.0.ZU;2-S
Abstract
An approach to study the noise characteristics in mesoscopic devices is pre sented. It extends, via quantum trajectories, the classical particle Monte Carlo techniques to devices where quantum nonlocal effects are important. A s a numerical example, the fluctuations of the electron current through sin gle-tunnel barriers are compared with the standard Landauer-Buttiker result s, showing an excellent agreement. (C) 2001 American Institute of Physics.