INFLUENCE OF GROWN-IN HYDROGEN ON THERMAL DONOR FORMATION AND OXYGEN PRECIPITATION IN CZOCHRALSKI SILICON-CRYSTALS

Using hydrogen-enhanced thermal donor formation and hydrogen-enhanced oxygen precipitate nuclei formation, we confirmed the presence of hydr ogen in as-grown Czochralski (CZ) silicon (Si) ingots. Hydrogen concen trations in as-grown ingots were very low at 2.5 x 10(11) cm(-3). We f ound that even such a small amount of hydrogen influences the quality of as-grown CZ Si crystals due to hydrogen-enhanced oxygen precipitate nuclei formation caused by in situ, annealing during crystal growth. Reducing hydrogen contamination during crystal growth is important in obtaining high-quality CZ Si crystals.