An individual particle approach to noise in pseudomorphic heterojunction field effect transistors

The fluctuating steady state current through a pseudomorphic heterojunction field-effect transistor at a typical working point has been calculated by means of the Monte Carlo particle model. This method was chosen because the noise it yields reflects the physical processes in the transistor itself. The pattern of the fluctuating current inside the transistor was mapped at regular intervals of time. The temporal fluctuations in the drain current f rom the mean were correlated to these maps and it was found that the observ ed deviations from its mean originate between the gate and the drain. (C) 2 001 American Institute of Physics.