Si and SiOx nanostructures formed via thermal evaporation

Citation
Yj. Chen et al., Si and SiOx nanostructures formed via thermal evaporation, CHEM P LETT, 344(5-6), 2001, pp. 450-456
Citations number
19
Categorie Soggetti
Physical Chemistry/Chemical Physics
Journal title
CHEMICAL PHYSICS LETTERS
ISSN journal
00092614 → ACNP
Volume
344
Issue
5-6
Year of publication
2001
Pages
450 - 456
Database
ISI
SICI code
0009-2614(20010831)344:5-6<450:SASNFV>2.0.ZU;2-O
Abstract
Various Si and SiOx (x = I to 2) nanostructures were formed via a thermal e vaporation method of heating pure silicon powder at 1373 K under Ar flow. A n alkali-treated quartz glass plate coating with catalyst precursor of a Fe (NO3)(3) aqueous solution was used as substrate. The product exhibited morp hologies of fist-capped SiOx fibers (Si-core), tree-like SiOx nanofibers an d tadpole-like SiOx nanofibers in different areas of the substrate. The dif ferent local temperature gradient, concentration of silicon vapor and silic on oxide vapor, and also the substrate surface condition were suggested to be responsible for the versatile morphologies of the products. (C) 2001 Els evier Science B.V. All rights reserved.