Observation of an optical phonon band in situ in TiO2 electrochemistry: a possible indicator of strongly trapped intermediates in the O-2 evolution reaction
Pa. Christensen et al., Observation of an optical phonon band in situ in TiO2 electrochemistry: a possible indicator of strongly trapped intermediates in the O-2 evolution reaction, CHEM P LETT, 344(5-6), 2001, pp. 488-494
This Letter reports in situ Fourier transform infrared (FTIR) spectroscopic
data on thermal TiO2 films fabricated by heating titanium plates in air at
475, 700 and 800 degreesC. The films were studied in the dark and under UV
-irradiation in aqueous 0.1 M NaClO4 in the presence and absence of 0.1 M N
a-2(OOC)(2) and at 10, 25 and 50 degreesC. The film fabricated at 800 degre
esC showed a broad feature near 1580 cm(-1) under UV-irradiation that was n
ot observed in the dark, whilst the films fabricated at lower temperatures,
475 and 700 degreesC, showed no such feature. This feature appears to be a
ssociated with the accumulation of surface-mobile holes at the complex, por
ous film-electrolyte interface and the capacity of such holes to enhance th
e absorption cross-section of optical phonons characteristic of the rutile
crystal form at and near the surface of the TiO2/electrolyte interface. (C)
2001 Elsevier Science B.V. All rights reserved.