Photoluminescence of nanocrystalline SiC films prepared by rf magnetron sputtering

Amorphous Sic films are deposited on Si (111) substrates by rf magnetron sp uttering and then annealed at 1200 degreesC for different times by a dc sel f-heating method in a vacuum annealing system. The crystallization of the a morphous Sic is determined by Raman scattering at room temperature and X-ra y diffraction. The experimental result indicates that the Sic nanocrystals have formed in the films. The topography of the as-annealed films is charac terized by atomic force microscopy. Measurements of photoluminescence of th e as-annealed films show blue or violet light emission from the nanocrystal line Sic films and photoluminescence peak shifts to short wavelength side a s the annealing time decreases.