Two different types of Silicon nano-wires (SiNWs) have been observed by sca
nning and transmission electron microscopy. One are of free standing SiNWs
deposited uniformly on the surface of silicon substrates, and the other are
self-assembled into special shaped particles. These SiNWs were synthesized
by thermal evaporation of SiO amorphous powders without any metal catalyst
s in the temperature range of 900-1250 degreesC. Growth history reveals tha
t the self-assembled SiNWs are formed by original nucleation from the surfa
ce of amorphous SiOx particle matrices through phase separation and silicon
precipitation followed by further growth through oxide-assisted vapor-soli
d reactions. The above results provide a solid experimental support for the
oxide-assisted growth model of SiNWs.