Heat and mass transport computation at the sublimation growth of SiC

Steady-state heat and mass transport at the SiC growth process are computed by the general-purpose finite-element package FIDAP (TM). Specific feature s are the radiation exchange in several cavities at temperatures up to 2700 K and concentration dependent Stefan velocities resulting from sublimation /condensation at the vapour-solid interfaces. The article describes the com putational procedure in order to achieve convergence of the temperature and velocity field. The transport rate of the SiC building species meets the r ange of experimental results.