HIGHLY POLARIZED ELECTRON SOURCE USING INGAAS-GAAS STRAINED-LAYER SUPERLATTICE

Authors
OMORI T KURIHARA Y TAKEUCHI Y YOSHIOKA M NAKANISHI T OKUMI S TSUBATA M TAWADA M TOGAWA K TANIMOTO Y TAKAHASHI C BABA T MIZUTA M
Citation
T. Omori et al., HIGHLY POLARIZED ELECTRON SOURCE USING INGAAS-GAAS STRAINED-LAYER SUPERLATTICE, JPN J A P 1, 33(10), 1994, pp. 5676-5680
Citations number
23
Categorie Soggetti
Physics, Applied
Journal title
JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS → ACNP
Volume
33
Issue
10
Year of publication
1994
Pages
5676 - 5680
Database
ISI
SICI code
Abstract
We have studied the polarization of photoemission from an In0.15Ga0.85 As-GaAs strained-layer superlattice. The polarization of 82.7 +/- 0.3( stat.)+/-6.1(syst.)% was observed at laser wavelengths from 911 to 916 nm at room temperature. The quantum efficiency at the wavelength of 9 11 nm was similar to 0.015% in the vacuum of similar to 6 x 10(-10) To rr with high cathode voltage of -4 kV.