High density plasma etching of Y-Ba-Cu-O superconductors

A parametric study of high density plasma etching of Y-Ba-Cu-O films was ca rried out in a planar-type inductively coupled plasma (ICP) etcher. The etc h rate was a strong function of ICP source power, radio frequency chuck pow er, and reactor pressure, Practical etch rates of 2500-3500 Angstrom /min w ere obtained at moderate ICP conditions. The transition temperature (T-c) o f the superconductor did not deteriorate during the ICP etch process, and w as about 87 K. Etch results showed that ICP etching is a promising techniqu e for patterning high T-c superconducting films into devices. (C) 2001 The Electrochemical Society.