This work presents an improved point defect model for the time-dependent fo
rmation of passive oxide films on metal surfaces. Like previous point-defec
t models, the present model assumes that charged defects, or vacancies, car
ry current across the growing oxide film. However, we treat the vacancies e
xplicitly as material species which participate in oxide formation and diss
olution reactions formulated for arbitrary oxide stoichiometry. The model i
ncludes boundary conditions, based on jump mass balances from formal contin
uum mechanics, that relate vacancy fluxes to the interfacial reaction rates
as well as the motion of the film boundaries. Thus, unlike previous models
, this model treats the film growth process formally as a moving boundary p
roblem. Casting the equations in dimensionless form yields the key dimensio
nless groups. The dependence of the film growth rate on these groups can be
rationalized in simple physical terms. The predicted trends in film growth
rate and current density agree qualitatively with experimental data for ni
ckel passivation, although the model parameters have not been optimized to
achieve good agreement with current density data. The model provides a star
ting point for incorporating better descriptions of interfacial reaction ki
netics within boundary conditions based on rigorous continuum mechanics. (C
) 2001 Elsevier Science Ltd. All rights reserved.