ZNCDSE ZNSE QUANTUM-WELL LASER-DIODE ON A (711)A GAAS SUBSTRATE/

For the purpose of increasing the acceptor concentration in p-type ZnS e, nitrogen-doped ZnSe was grown on (n11) GaAs substrates. An acceptor concentration twice as large as that on a (100) substrate was obtaine d and found to be reproducible, except for (111) substrates, on which ZnSe films showed high resistivity. The PL characteristics of ZnCdSe/Z nSe single quantum wells (SQWs) on a (n11) substrate were also examine d. The PL spectrum showed a blue shift mainly caused by the smaller Cd composition on a (n11) substrate than that on a (100) substrate. Fina lly, a ZnCdSe/ZnSe MQW SCH laser with HR-coated facets, a 900-mu m-lon g cavity, and a 20-mu m stripe contact was fabricated on a (711)A subs trate. The built-in voltage of a LD on the (711)A substrate is 5 V low er than a LD on the (100) substrate. The former oscillated under pulse d operation at 25 degrees C with a threshold current of 3.1 A and an o scillation wavelength of 501 nm.