ZN-DIFFUSION-INDUCED DISORDERING OF INGAAS ALGAINAS MULTIPLE-QUANTUM-WELL AND ITS APPLICATION TO LONG-WAVELENGTH LASER/

Zn-diffusion-induced disordering of the InGaAs/AlGaInAs multiple quant um well (MQW) is investigated as a new processing technique for long-w avelength optoelectronic devices. Complete disordering of the MQW stru cture is confirmed through the observation of the shortening of the ph otoluminescence peak wavelength and secondary ion mass spectroscopy (S IMS) measurement. Lattice-matched disordering is also confirmed with X -ray diffraction. ii long-wavelength buried-MQW laser is fabricated fo r the first time, in which index-waveguide end carrier confinement are obtained by disordering. The pulsed oscillation at room temperature i s achieved near 1.56 mu m.