In this paper, we have established a d.c. circuit model of a MOS magne
tic sensor. The elements of the model, such as input resistance, outpu
t resistance, offset voltage source and Hall voltage source, have also
been extracted by a new experimental method. With the model, we can a
nalyse the complete characteristics of a MOS magnetic sensor to help u
s design the post-circuit for signal processing. From our experiments,
we find that the output resistance and input resistance are always in
versely proportional to the gate bias. The model can facilitate the co
mputer-aided design of device and analog circuits in the SPICE environ
ment for MOS magnetic sensors.