DIELECTRIC-RELAXATION IN POLYUREA THIN-FILMS PREPARED BY VAPOR-DEPOSITION POLYMERIZATION

Citation
Xs. Wang et al., DIELECTRIC-RELAXATION IN POLYUREA THIN-FILMS PREPARED BY VAPOR-DEPOSITION POLYMERIZATION, JPN J A P 1, 33(10), 1994, pp. 5842-5847
Citations number
6
Categorie Soggetti
Physics, Applied
Volume
33
Issue
10
Year of publication
1994
Pages
5842 - 5847
Database
ISI
SICI code
Abstract
Polyurea thin films with the thickness of 500 nm were prepared by the vapor deposition of 4,4'-diamino diphenylmethane (MDA) and 4,4'-diphen ylmethane diisocyanate (MDI) on a polyimide film substrate. The dielec tric constants observed at 10 Hz for poled MDA-rich and MDI-rich films were about 10 and 3.5, respectively, and almost independent of temper ature up to 200 degrees C. The dielectric constant at 10 Hz for a pole d balanced film was 4 at room temperature and increased with increasin g temperature. A large dielectric relaxation was observed for the pole d balanced film at the temperature range from 152 to 192 degrees C and the frequency range from 10(-2) to 10(2) Hx. The estimated relaxation strength was about 700. It was presumed that polar domains consisting of about 20 monomers were formed by the poling process, in which urea bonds were aligned in parallel and linked by hydrogen bonds.