SiO2 surface and SiO2/Si interface topography change by thermal oxidation

Using a wide atomically Hat (111) Si surface, the topography change of SiO2 surface and SiO2/Si interface by (hernial oxidation was investigated for v arious oxidation temperatures. The initial step/terrace configuration was p reserved on the SiO2 surface irrespective of oxidation temperature. On the other hand, the general step/terrace configuration of the initial Si surfac e was succeeded by the SiO2/Si interface at temperatures lower than 950 deg reesC, while at temperatures higher than 1050 degreesC. the configuration w as destroyed at the SiO2/Si interface with increasing oxide thickness until the steps finally disappeared. Ter-race surfaces. however, were steeply mi croscopically roughened in the initial oxidation range irrespective of the oxidation temperature.