G. Wang et al., Passivation of bulk and surface defects in GaAs grown on Si substrate by radio frequency phosphine/hydrogen plasma exposure, JPN J A P 1, 40(8), 2001, pp. 4781-4784
The effects of PH3/H-2 plasma exposure on GaAs grown on Si substrate (GaAs/
Si) were investigated. It was found that corporation of P atoms in H-2 plas
ma not only hydrogenated the defect-related recombination centers of GaAs/S
i epilayer, but also phosphidized the surface region of GaAs/Si epilayer by
forming a phosphidized layer, Electron beam-induced current measurement di
rectly proved that the defect-related dark spot density was effectively red
uced by adding P atoms into the pure H-2 plasma. In addition, PH3/H-2 plasm
a exposure greatly increased the minority carrier lifetime properties and d
ecreased the saturation current of the GaAs p(+)-n junction structure grown
on Si substrate.