Device applied Fowler-Nordheim relationship

A method for applying the Fowler-Nordheim (FN) relationship to analyze data pertaining to field emission (FE) devices is outlined. The emission curren t is obtained through integration of the FN current density over the emitte r area, taking into account the local value of the electric field. The slop e and intercept of the FN plots are used to plot the slope versus the inter cept diagram. with emitter work function Phi and radius R as parameters. Ea ch experimental current-voltage data set is represented in this diagram as a point inside the lattice of equi-Phi and equi-R lines, facilitating deriv ation of the actual Phi and R values. An analytical FE diode model and a nu merical FE microtriode model are used to exemplify this approach. The metho d can be used as a convenient graphical tool to analyze the experimental re sults of FE.