Chemical vapor deposition of copper thin film using a novel precursor of allyloxytrimethylsilyl hexafluoroacetylacetonate copper(I)

A new volatile liquid copper precursor of allyloxytrimethylsilyl hexafluoro acetylacetonate copper (1) [Cu(hfac)(aotms)]. termed Cypron was studied for the chemical vapor deposition of copper (Cu-CVD) thin films. This precurso r has higher vapor pressure and more suitable thermal stability than the pr eviously known trimethylvinylsilyl hexafluoroacetylacetonate copper (1) [Cu (hfac)(tmvs)]. In the presence of water vapor, smooth copper films were obt ained with a high deposition rate of about 90 nm/min at a low temperature o f 190 degreesC. The resistivity of the films was as low as 1.9 mu Omega (.) cm. The step coverage and filling property of this novel precursor were exc ellent.