Thermal-treatment induced deep electron traps in AlInP

The effects of thermal treatment on the quality of AlInP film, grown by met al-organic chemical vapor deposition (MOCVD), have been carefully investiga ted using deep level transient spectroscopy (DLTS). Two thermal-treatment-i nduced deep levels were observed in the samples thermal-treated above 500 d egreesC and shall be attributed to the generation of phosphorus vacancies ( V-p) by evaporation of phosphorus from AlInP surface. Examination of these deep levels provided a relatively simple means of understanding the thermal -treatment-induced behavior, thus allowing us to determine an appropriate p rocess for manufacturing AlInP-based products.