SiO2 insulation layer fabricated using RF magnetron facing target sputtering and conventional RF magnetron sputtering

We have investigated the deposition conditions for a SiO2 insulation layer, such as the substrate-target length, Ar pressure and applied RF power dens ity. using both RF magnetron facing target sputtering and the conventional RF sputtering techniques. We have fabricated an SiO2 layer having with a go od surface smoothness under the high deposition rate condition using the RF magnetron facing target sputtering technique.