Design and fabrication process of optically pumped GaInAsP/InP stripe laser with resonant pumping for high-power operation

Authors
Onishi, Y Koyama, F Iga, K
Citation
Y. Onishi et al., Design and fabrication process of optically pumped GaInAsP/InP stripe laser with resonant pumping for high-power operation, JPN J A P 1, 40(8), 2001, pp. 4920-4921
Citations number
8
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science
Journal title
JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS → ACNP
Volume
40
Issue
8
Year of publication
2001
Pages
4920 - 4921
Database
ISI
SICI code
Abstract
A high-power GaInAsP/InP semiconductor laser optically pumped by a 0.98 mum high-power broad area laser has been proposed. A vertical resonant pumping scheme is introduced to increase the absorption efficiency of the pump lig ht. It is shown that the fraction of absorbed pump light can be increased u p to 99% by inserting a highly reflective mirror with a reflectivity of 99% . in addition, a vertical resonant cavity using a GaAs/AlAs distributed Bra gg reflector (DBR) was formed by a low-temperature water bonding technique.