Structure of vacuum-deposited tetramethyltetraselenofulvalene-tetracyanoquinodimethane complex film

Authors
Citation
J. Chen et Y. Ueda, Structure of vacuum-deposited tetramethyltetraselenofulvalene-tetracyanoquinodimethane complex film, JPN J A P 1, 40(8), 2001, pp. 5085-5090
Citations number
11
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science
Volume
40
Issue
8
Year of publication
2001
Pages
5085 - 5090
Database
ISI
SICI code
Abstract
Tetramethyltetraselenofulvalene-tetracyanoquinodimethane (TMTSF-TCNQ) compl ex film was prepared and vacuum-deposited on the cleaved (001) surface of K Cl and KBr substrates. The unit cell parameters of the red form crystal rep orted previously, were revised as a = 1.3768 nm, b = 1.2671 nm, c = 0.6998 nm, alpha = 103.78 degrees, beta = 98.49 degrees and gamma = 75.4 degrees. The TMTSF-TCNQ complex film was composed of red form crystals regardless of the source material and grew epitaxially on the KBr and KCl substrates wit h the following relationship: [100](0-12)(TMTSF-TCNQ) parallel to < 100 > ( 001)(KBr), [100](0-12)(TMTSF-TCNQ) parallel to < 100 > (001)(KCl) or [100]( 0-12)(TMTSF-TCNQ) parallel to < 100 > (001)(KCl). The change in epitaxy dep ending on the type of substrate and the transformation from the black form crystal to the red form one during the evaporation process are discussed.