Wavelength dependence of InGaN laser diode characteristics

InGaN multi-quantum-well-structure laser diodes (LDs) with an emission wave length of longer than 420 nm were grown on both an epitaxially laterally ov ergrown GaN (ELOG) substrate and an ELOG on a free-standing GaN substrate b y a metaorganic chemical vapor deposition method, The wavelength dependence of InGaN LD characteristics was investigated. It was found that there was a strong relationship between the threshold current density and the emissio n wavelength of LDs. The LDs with the emission wavelength of 450 nm grown o n the ELOG on a free-standing GaN substrate were demonstrated. The threshol d current density and voltage of these LDs were 2.8 kA/cm(2) and 4.5 V, res pectively. The estimated lifetime was approximately 5000 It under 50 degree sC continuous-wave operation at an output power of 5 mW.