Band-gap bowing parameter of the InxGa1-xN derived from theoretical simulation

Authors
Kuo, YK Lin, WW Lin, J
Citation
Yk. Kuo et al., Band-gap bowing parameter of the InxGa1-xN derived from theoretical simulation, JPN J A P 1, 40(5A), 2001, pp. 3157-3158
Citations number
20
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science
Journal title
JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS → ACNP
Volume
40
Issue
5A
Year of publication
2001
Pages
3157 - 3158
Database
ISI
SICI code
Abstract
The band-gap energy and band-gap bowing parameter of the wurtzite InGaN all oys are investigated numerically with the CASTEP simulation program. The si mulation results suggest that the unstrained band-gap bowing parameter for the wurtzite InGaN alloys is b = 1.21 +/- 0.03 eV. The simulation results a lso show that the width of the InxGa1-xN top valence band at the Gamma poin t decreases when the indium composition increases and has a value of 7.331 eV for the GaN (x = 0) and 6.972 eV for the In0.375Ga0.625N (x = 0.375).