Leakage current characteristics of (Ba,Sr)TiO3 thin films deposited on Ru electrodes prepared by metal organic chemical vapor deposition

Authors
Kil, DS Park, JB Yoon, DS Song, CR Cho, HJ Kim, Y Yu, YS Roh, JS Yoon, HK
Citation
Ds. Kil et al., Leakage current characteristics of (Ba,Sr)TiO3 thin films deposited on Ru electrodes prepared by metal organic chemical vapor deposition, JPN J A P 1, 40(5A), 2001, pp. 3260-3265
Citations number
17
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science
Journal title
JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS → ACNP
Volume
40
Issue
5A
Year of publication
2001
Pages
3260 - 3265
Database
ISI
SICI code
Abstract
Leakage current characteristics of (Ba,Sr)TiO3 (BST) thin films deposited b y metal-organic chemical, vapor deposition (MOCVD) on Ru bottom electrodes were investigated. CVD-BST thin film on an Ru electrode showed much higher leakage current density than that on the Pt electrode. In the case of the C VD-BST thin film deposited on the PVD-BST(30 Angstrom)/Ru or N2O-plasma-tre ated Ru electrode, the leakage current density showed a very small Value of about 2 x 10(-8) A/cm(2) at +/- 1 V and the dielectric loss was about 0.00 6. It was found that oxygen atoms adsorbed on the surface of the Ru bottom electrode during the deposition of PVD-BST or N2O plasma treatment played a key role in restoring the barrier height at the bottom interface.