Characteristics of indium tin oxide films deposited by DC and RF magnetronsputtering

Conductive and transparent indium tin oxide (ITO) films with a thickness of 100 nm were deposited onto glasses and Si(100) wafers by direct current (D C) and radio frequency (RF) magnetron sputtering. The formation and the ann ealing effect of films were studied by the measurements of resistivity, opt ical-transmission, X-ray diffraction and scanning tunneling, microscopy (ST M). Experimental studies indicated those films deposited by DC sputtering i n a 1% O-2 in an O-2/Ar gas mixture, without annealing, have the lowest res istivity and the highest transmission. In addition, the films deposited by RF sputtering in a 3% O-2 in an O-2/Ar gas mixture, with annealing in air a t 300 degreesC for 2 h, have better resistivity and transmission.