Empirical model of flicker in silicon light valves

Citation
Hc. Huang et Pw. Cheng, Empirical model of flicker in silicon light valves, JPN J A P 1, 40(5A), 2001, pp. 3448-3456
Citations number
13
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science
Volume
40
Issue
5A
Year of publication
2001
Pages
3448 - 3456
Database
ISI
SICI code
Abstract
We have performed systematic characterizations of flicker in silicon light valves. It was found that temperature was the most important factor associa ted with flicker. Temperature could assist conduction mechanisms in silicon light valves and enhance the flicker accordingly. The major conduction mec hanisms of flicker in silicon light valves were residual DC charge on the s ilicon surface, the voltage holding capability of a liquid crystal cell, th e voltage holding capability of a silicon panel, light leakage and parasiti c capacitor coupling. Major causes of these flicker mechanisms were identif ied through systematic characterizations. An empirical model of flicker was proposed with quantitative experimental data and theories. Among these con duction mechanisms, temperature could boost the voltage holding capabilitie s of a silicon panel to become the most dominant cause of flicker when the temperature was above 40 degreesC. At temperatures below 30 degreesC, the o ther four conduction mechanisms contributed to the flicker in different way s. Minimization of flicker could be achieved through materials and device o ptimization.