Integration of terraced laser diode and garnet crystals by wafer direct bonding

Integration of a semiconductor laser diode and an optical isolator was stud ied using the wafer direct bonding technique. A terraced laser diode was fa bricated by reactive ion etching using CH4/H-2/O-2 gas. A smooth and vertic al mirror facet was obtained by adjusting the flow rate of the etchant gas. Room-temperature pulsed laser operation was achieved in the laser diode wi th one cleaved facet and the second facet formed by reactive ion etching. T he terraced laser diode was integrated with garnet crystals by wafer direct bonding. Room-temperature pulsed laser operation was confirmed after the b onding process.